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SPD06N80C3

MOSFET N-CH 800V 6A 3TO252
Manufacturer: Infineon Technologies
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Quantity
Price
Ext. Price
30+
€1.541
€46.224
75+
€1.217
€91.260
250+
€1.095
€273.825
Availability: 200 In Stock
This product has a minimum quantity of 30
SPD06N80C3, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO252-3 SMD (SMT) package. The features include 800V drain-source breakdown voltage, 6A (Ta) continuous drain current at 25°C ,3.9V @ 250μA gate-source threshold voltage. SPD06N80C3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 785pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 091089-SPD06N80C3
Family Name SPD06N80C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
FCD850N80Z; TSM80N950CP ROG; STD9N80K5; 
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 785pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 091089-SPD06N80C3
Family Name SPD06N80C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
FCD850N80Z; TSM80N950CP ROG; STD9N80K5; 
SPD06N80C3 Price

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