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SPD06N80C3

Part No : SPD06N80C3
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 800V 6A 3TO252
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
30+
€1.588
€47.628
70+
€1.343
€93.996
105+
€1.302
€136.742
145+
€1.262
€182.961
185+
€1.221
€225.941
250+
€1.099
€274.725
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 30,613 pieces can ship immediately
MOQ: 30 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 785pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 091089-SPD06N80C3
Family Name SPD06N80C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 38 pct.
Supply and Demand Status Limited
Application Field Used in Industrial, Communications & Networking, Consumer Electronics, Power Management
Alternative Parts
(Cross-Reference)
FCD850N80Z; TSM80N950CP ROG; STD9N80K5; 

SPD06N80C3, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO252-3 SMD (SMT) package. The features include 800V drain-source breakdown voltage, 6A (Ta) continuous drain current at 25°C ,3.9V @ 250μA gate-source threshold voltage. SPD06N80C3 is used in the -55°C to 150°C (TJ) operating temperature range.

Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 785pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 091089-SPD06N80C3
Family Name SPD06N80C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 38 pct.
Supply and Demand Status Limited
Application Field Used in Industrial, Communications & Networking, Consumer Electronics, Power Management
Alternative Parts
(Cross-Reference)
FCD850N80Z; TSM80N950CP ROG; STD9N80K5; 
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SPD06N80C3 Transistors - FETs, MOSFETs - RF

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