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STQ1NC45R-AP

Part No : STQ1NC45R-AP
Manufacturer : STMicroelectronics
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 450V 0.5A TO-92
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
315+
€0.144
€45.360
745+
€0.122
€90.518
1,150+
€0.118
€135.585
1,575+
€0.114
€180.023
2,035+
€0.111
€225.275
2,705+
€0.100
€270.230
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 29,889 pieces can ship immediately
MOQ: 315 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging AMMO PACKAGE
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 450V
Continuous Drain Current at 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.1W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 500mA, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Win Source Part Number 038709-STQ1NC45R-AP
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 72 pct.
Supply and Demand Status Sufficient
STQ1NC45R-AP, produced by STMicroelectronics, is a N-Channel MOSFET transistor in TO-92-3 Through Hole package. The features include 450V drain-source breakdown voltage, 500mA (Tc) continuous drain current at 25°C ,3.7V @ 250μA gate-source threshold voltage. STQ1NC45R-AP is used in the -65°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging AMMO PACKAGE
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 450V
Continuous Drain Current at 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.1W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 500mA, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Win Source Part Number 038709-STQ1NC45R-AP
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 72 pct.
Supply and Demand Status Sufficient
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