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STY30NK90Z

MOSFET N-CH 900V 26A MAX247
Manufacturer: STMicroelectronics
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Quantity
Price
Ext. Price
20+
€2.700
€53.991
45+
€2.131
€95.899
135+
€1.918
€258.903
Availability: 1 In Stock
This product has a minimum quantity of 20
STY30NK90Z, produced by STMicroelectronics, is a N-Channel MOSFET transistor in MAX247 Through Hole package. The features include 900V drain-source breakdown voltage, 26A (Tc) continuous drain current at 25°C ,4.5V @ 150μA gate-source threshold voltage. STY30NK90Z is used in the -65°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 150μA
Max Gate Charge 490nC @ 10V
Max Input Capacitance 12000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 450W (Tc)
Maximum Rds On at Id,Vgs 260 mOhm @ 14A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package MAX247
Dimension TO-247-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 054066-STY30NK90Z
Family Name STY30NK90
Introduction Date November 01, 2003
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date Obsolete
Alternative Parts
(Cross-Reference)
IXFR40N90P; IXFL39N90; IXFX40N90P; 
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 150μA
Max Gate Charge 490nC @ 10V
Max Input Capacitance 12000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 450W (Tc)
Maximum Rds On at Id,Vgs 260 mOhm @ 14A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package MAX247
Dimension TO-247-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 054066-STY30NK90Z
Family Name STY30NK90
Introduction Date November 01, 2003
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date Obsolete
Alternative Parts
(Cross-Reference)
IXFR40N90P; IXFL39N90; IXFX40N90P; 
STY30NK90Z Price

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STY30NK90Z Transistors - FETs, MOSFETs - RF

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