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HGTD3N60C3S

Part No HGTD3N60C3S
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 6A 33W TO252AA
Datasheet
Sample
ECAD Module
rohs

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Pricing & Ordering $3.843 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
9+
$5.6560
$50.904
22+
$4.6410
$102.102
34+
$4.4960
$152.864
46+
$4.3510
$200.146
60+
$4.2060
$252.360
80+
$3.7710
$301.680
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 1,600 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 6A
Pulsed Collector Current 24A
Collector-emitter saturation voltage(Max) 2V @ 15V, 3A
Maximum Power Dissipation 33W
Total Switching Energy(Ets) 85μJ (on), 245μJ (off)
Input Type Standard
Gate Charge 10.8nC
Testing Conditions 480V, 3A, 82 Ohm, 15V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Win Source Part Number 204793-HGTD3N60C3S
Popularity Medium
Fake Threat In the Open Market 65 pct.
Supply and Demand Status Balance

Description

The HGTD3N60C3S is a single IGBT semiconductor product from Fairchild/ON Semiconductor. This product is obsolete (EOL) and has a balanced supply and demand status in the market. The fake threat in the open market is 65 percent. It has a collector-emitter breakdown voltage of 600V and a maximum current collector of 6A. The HGTD3N60C3S has a total switching energy of 85μJ (on) and 245μJ (off) and a gate charge of 10.8nC. This product has a medium popularity and is packaged in a reel-TR case with SMD (SMT) mounting.

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