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BFN18H6327XTSA1

Part No : BFN18H6327XTSA1
Manufacturer : Infineon Technologies
Catalog : Transistors(BJT) - Single
Description : TRANSISTOR AF SOT89-4
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 8,000 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 500mV @ 2mA, 20mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 30 @ 30mA, 10V
Maximum Power Dissipation 1.5W
Frequency - Transition 70MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT89
Win Source Part Number 1023233-BFN18H6327XTSA1
Popularity Medium
Fake Threat In the Open Market 51 pct.
Supply and Demand Status Balance
The BFN18H6327XTSA1 from Infineon Technologies is NPN Transistors(BJT) - Single device , available on PG-SOT89 Reel - TR, with 30 @ 30mA, 10V hFR, rated for operation over temperature range from 150°C (TJ).The maximum of V(br)CEO ,VCE ,Current Collector and Power Dissipation are 300V, 500mV @ 2mA, 20mA, 200mA and 1.5W.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 500mV @ 2mA, 20mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 30 @ 30mA, 10V
Maximum Power Dissipation 1.5W
Frequency - Transition 70MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT89
Win Source Part Number 1023233-BFN18H6327XTSA1
Popularity Medium
Fake Threat In the Open Market 51 pct.
Supply and Demand Status Balance
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BFN18H6327XTSA1 Transistors(BJT) - Single

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