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IPB47N10SL-26

Part No :
IPB47N10SL-26
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 1,051 pieces
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series SIPMOS
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 2mA
Gate Charge (Qg) (Maximum) @ Vgs 135nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2500pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 175W (Tc)
Rds On (Maximum) @ Id, Vgs 26 mOhm @ 33A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1186047-IPB47N10SL-26
Manufacturer Homepage www.infineon.com
Popularity Medium
Fake Threat In the Open Market 54 pct.
Supply and Demand Status Balance
Family Name IPB47N10SL-26
Introduction Date August 24, 2001
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2019
Alternative Parts
(Cross-Reference)
STB50NE10;  STB50NE10T4;  BUK7628-100A;  
Infineon Technologies IPB47N10SL-26 is available at WIN SOURCE. Please review product page below for detailed information, including IPB47N10SL-26 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB47N10SL-26 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series SIPMOS
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 2mA
Gate Charge (Qg) (Maximum) @ Vgs 135nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2500pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 175W (Tc)
Rds On (Maximum) @ Id, Vgs 26 mOhm @ 33A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1186047-IPB47N10SL-26
Manufacturer Homepage www.infineon.com
Popularity Medium
Fake Threat In the Open Market 54 pct.
Supply and Demand Status Balance
Family Name IPB47N10SL-26
Introduction Date August 24, 2001
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2019
Alternative Parts
(Cross-Reference)
STB50NE10;  STB50NE10T4;  BUK7628-100A;  
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