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IPS040N03LGAKMA1

MOSFET N-CHANNEL 30V 90A TO251-3
Manufacturer: Infineon Technologies
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Availability: 10,866 In Stock
IPS040N03LGAKMA1, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO251-3 Through Hole package. The features include 30V drain-source breakdown voltage, 90A (Tc) continuous drain current at 25°C ,2.2V @ 250μA gate-source threshold voltage. IPS040N03LGAKMA1 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 3900pF @ 15V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1046056-IPS040N03LGAKMA1
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 3900pF @ 15V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1046056-IPS040N03LGAKMA1
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