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IPT059N15N3ATMA1

MOSFET N-CH 150V 155A 8HSOF
Manufacturer: Infineon Technologies
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Availability: 1 In Stock
IPT059N15N3ATMA1, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-HSOF-8-1 SMD (SMT) package. The features include 150V drain-source breakdown voltage, 155A (Tc) continuous drain current at 25°C ,4V @ 270μA gate-source threshold voltage. IPT059N15N3ATMA1 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 155A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 270μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 7200pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 150A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-HSOF-8-1
Dimension 8-PowerSFN
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1046096-IPT059N15N3ATMA1
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 155A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 270μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 7200pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 150A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-HSOF-8-1
Dimension 8-PowerSFN
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1046096-IPT059N15N3ATMA1
IPT059N15N3ATMA1 Price

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IPT059N15N3ATMA1 In Stock

IPT059N15N3ATMA1 Distributor
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