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IRF7317PBF

Part No : IRF7317PBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N/P-CH 20V 8-SOIC
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
45+
$1.175
$52.875
105+
$0.995
$104.475
160+
$0.964
$154.240
215+
$0.934
$200.810
280+
$0.904
$253.120
370+
$0.814
$301.180
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 1 pieces can ship immediately
MOQ: 45 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.6A, 5.3A
Maximum Rds On at Id,Vgs 29 mOhm @ 6A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 900pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046603-IRF7317PBF
Family Name IRF7317
Introduction Date August 13, 2004
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 44 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
AP2030M; Si9529DY;  Si9529DY-E3; 
IRF7317PBF, produced by Infineon Technologies, is a transistor in 8-SO SMD (SMT) package. The features include 20V drain-source breakdown voltage, 6.6A, 5.3A continuous drain current at 25°C ,700mV @ 250μA gate-source threshold voltage. IRF7317PBF is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.6A, 5.3A
Maximum Rds On at Id,Vgs 29 mOhm @ 6A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 900pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046603-IRF7317PBF
Family Name IRF7317
Introduction Date August 13, 2004
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 44 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
AP2030M; Si9529DY;  Si9529DY-E3; 
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