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IRF9392PBF

Part No : IRF9392PBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET P-CH 30V 9.8A 8SOIC
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
180+
$0.283
$50.940
420+
$0.240
$100.800
650+
$0.232
$150.800
890+
$0.225
$200.250
1,150+
$0.218
$250.700
1,535+
$0.196
$300.860
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 3,590 pieces can ship immediately
MOQ: 180 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V, 20V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1270pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 12.1 mOhm @ 7.8A, 20V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046774-IRF9392PBF
Popularity Medium
Fake Threat In the Open Market 50 pct.
Supply and Demand Status Balance
IRF9392PBF, produced by Infineon Technologies, is a P-Channel MOSFET transistor in 8-SO SMD (SMT) package. The features include 30V drain-source breakdown voltage, 9.8A (Ta) continuous drain current at 25°C ,2.4V @ 25μA gate-source threshold voltage. IRF9392PBF is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V, 20V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1270pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 12.1 mOhm @ 7.8A, 20V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046774-IRF9392PBF
Popularity Medium
Fake Threat In the Open Market 50 pct.
Supply and Demand Status Balance
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