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IRFH4257DTRPBF

Part No : IRFH4257DTRPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET 2N-CH 25V 25A 24PQFN
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
45+
€1.116
€50.225
105+
€0.945
€99.194
160+
€0.916
€146.530
220+
€0.888
€195.335
285+
€0.859
€244.814
375+
€0.773
€289.983
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 20,000 pieces can ship immediately
MOQ: 45 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 25A
Maximum Rds On at Id,Vgs 3.4 mOhm @ 25A, 10V
Gate-Source Threshold Voltage 2.1V @ 35μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1321pF @ 13V
Maximum Power Dissipation 25W, 28W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Dual PQFN (5x4)
Win Source Part Number 1046864-IRFH4257DTRPBF
Popularity Medium
Fake Threat In the Open Market 56 pct.
Supply and Demand Status Balance
IR introduced IRFH4257D FastIRFET dual-power MOSFET in a high-performance 4 × 5 PQFN power module package . This new package expands IR's power module portfolio to make it available for lower power, compact designs for 12V input DC-DC synchronous buck applications including advanced telecommunications and network communications equipment, servers, displays Adapters, desktops, Ultrabooks and laptops.The IRFH4257D incorporates IR's next-generation silicon technology and package patented technology to deliver superior thermal performance, low on-resistance (RDS (on)) and gate charge (Qg) in a compact 4 × 5 power module for best-in-class power Density and lower switching losses.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 25A
Maximum Rds On at Id,Vgs 3.4 mOhm @ 25A, 10V
Gate-Source Threshold Voltage 2.1V @ 35μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1321pF @ 13V
Maximum Power Dissipation 25W, 28W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Dual PQFN (5x4)
Win Source Part Number 1046864-IRFH4257DTRPBF
Popularity Medium
Fake Threat In the Open Market 56 pct.
Supply and Demand Status Balance
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