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IRFR024NTRRPBF

Part No : IRFR024NTRRPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 55V 17A DPAK
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 7,400 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 10A, 10V
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047010-IRFR024NTRRPBF
Popularity Medium
Fake Threat In the Open Market 37 pct.
Supply and Demand Status Balance
IRFR024NTRRPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in D-Pak SMD (SMT) package. The features include 55V drain-source breakdown voltage, 17A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 10A, 10V
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047010-IRFR024NTRRPBF
Popularity Medium
Fake Threat In the Open Market 37 pct.
Supply and Demand Status Balance
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