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IRFH5110TR2PBF

Part No : IRFH5110TR2PBF
Manufacturer : Infineon Technologies
Catalog : FETs - Single
Description : HEXFET Power MOSFET | MOSFET N-CH 100V 5X6 PQFN
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 345 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 11A, 63A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 12.4mOhm at 37A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 72nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3152pF at 25V
Power Dissipation (Maximum) 3.6W, 114W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-PQFN (5x6)
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1187609-IRFH5110TR2PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Fake Threat In the Open Market 71 pct.
Supply and Demand Status Limited
Infineon Technologies IRFH5110TR2PBF is available at WIN SOURCE. Please review product page below for detailed information, including IRFH5110TR2PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFH5110TR2PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 11A, 63A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 12.4mOhm at 37A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 72nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3152pF at 25V
Power Dissipation (Maximum) 3.6W, 114W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-PQFN (5x6)
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1187609-IRFH5110TR2PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Fake Threat In the Open Market 71 pct.
Supply and Demand Status Limited
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IRFH5110TR2PBF FETs - Single

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