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IRFI530G

Part No IRFI530G
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET POWER MOSFET | MOSFET N-CH 100V 9.7A TO220FP
Sample
Rohs State Need to verify
ECAD Module ECAD

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Pricing & Ordering $1.067 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
35+
$1.4830
$51.905
85+
$1.2170
$103.445
130+
$1.1790
$153.270
180+
$1.1410
$205.380
230+
$1.1030
$253.690
305+
$0.9890
$301.645
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 9,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 9.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 160mOhm at 5.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 33nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 670pF at 25V
Power Dissipation (Maximum) 42W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187640-IRFI530G
Manufacturer Homepage www.irf.com
Popularity Medium
Fake Threat In the Open Market 38 pct.
Supply and Demand Status Limited
Application Field Used in Power Management

Description

The Vishay Siliconix IRFI530G is an N-channel MOSFET transistor designed for use in power management applications. The transistor has a maximum drain-source breakdown voltage of 100 volts and a continuous drain current of 9.7 amperes. The transistor has a maximum on-resistance of 160 milliohms at a gate-source voltage of 10 volts and a drain current of 5.8 amperes. The transistor has a gate-source voltage threshold of 4 volts at a current of 250 microamperes. The transistor has a gate-source voltage rating of ±20 volts. The transistor has a maximum input capacitance of 670 picofarads at a drain-source voltage of 25 volts. The transistor is packaged in a TO-220-3 full pack with an isolated tab. The transistor has a medium popularity in the market but its availability is limited.

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