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IXFH26N50P3

Part No : IXFH26N50P3
Manufacturer : IXYS
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 500V 26A TO-247
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 2,700 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 2220pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 230 mOhm @ 132A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049406-IXFH26N50P3
Popularity Medium
Fake Threat In the Open Market 31 pct.
Supply and Demand Status Balance
Quantity per package 30
IXFH26N50P3, produced by IXYS, is a N-Channel MOSFET transistor in TO-247AD (IXFH) Through Hole package. The features include 500V drain-source breakdown voltage, 26A (Tc) continuous drain current at 25°C ,5V @ 4mA gate-source threshold voltage. IXFH26N50P3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 2220pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 230 mOhm @ 132A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049406-IXFH26N50P3
Popularity Medium
Fake Threat In the Open Market 31 pct.
Supply and Demand Status Balance
Quantity per package 30
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IXFH26N50P3 Transistors - FETs, MOSFETs - RF

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