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IXFN50N80Q2

Part No : IXFN50N80Q2
Manufacturer : IXYS
Catalog : Transistors - FETs, MOSFETs - RF
Description : HiPerFET Power MOSFETs Q-Class
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 4 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 50A
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 260nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 13500pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1135W (Tc)
Rds On (Maximum) @ Id, Vgs 160 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Manufacturer Package SOT-227B
Package SOT-227-4, miniBLOC
Win Source Part Number 1191120-IXFN50N80Q2
Manufacturer Homepage www.ixys.com
Popularity Medium
Fake Threat In the Open Market 64 pct.
Supply and Demand Status Limited
Family Name IXFN50N80Q2
Introduction Date May 08, 2003
ECCN EAR99
Estimated EOL Date 2019
Alternative Parts
(Cross-Reference)
APT8014JFLL;  APT8020JLL; APT8020JFLL; 
IXYS IXFN50N80Q2 is available at WIN SOURCE. Please review product page below for detailed information, including IXFN50N80Q2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXFN50N80Q2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 50A
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 260nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 13500pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1135W (Tc)
Rds On (Maximum) @ Id, Vgs 160 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Manufacturer Package SOT-227B
Package SOT-227-4, miniBLOC
Win Source Part Number 1191120-IXFN50N80Q2
Manufacturer Homepage www.ixys.com
Popularity Medium
Fake Threat In the Open Market 64 pct.
Supply and Demand Status Limited
Family Name IXFN50N80Q2
Introduction Date May 08, 2003
ECCN EAR99
Estimated EOL Date 2019
Alternative Parts
(Cross-Reference)
APT8014JFLL;  APT8020JLL; APT8020JFLL; 
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IXFN50N80Q2 Transistors - FETs, MOSFETs - RF

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