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IXKC15N60C5

Part No :
IXKC15N60C5
Manufacturer :
Catalog :
FETs - Single
Description :
Electrically isolated back surface Electrically isolated back surface | MOSFET N-CH 600V 15A ISOPLUS220
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 10 pieces
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 15A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 165mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 900μA
Gate Charge (Qg) (Maximum) at Vgs 52nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2000pF at 100V
FET Feature Super Junction
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package ISOPLUS220
Manufacturer Package ISOPLUS220
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191216-IXKC15N60C5
Manufacturer Homepage www.ixys.com
Popularity Medium
Fake Threat In the Open Market 66 pct.
Supply and Demand Status Limited
IXYS IXKC15N60C5 is available at WIN SOURCE. Please review product page below for detailed information, including IXKC15N60C5 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXKC15N60C5 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 15A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 165mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 900μA
Gate Charge (Qg) (Maximum) at Vgs 52nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2000pF at 100V
FET Feature Super Junction
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package ISOPLUS220
Manufacturer Package ISOPLUS220
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191216-IXKC15N60C5
Manufacturer Homepage www.ixys.com
Popularity Medium
Fake Threat In the Open Market 66 pct.
Supply and Demand Status Limited
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