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IXTP02N50D

Name: IXTP02N50D
Brand: IXYS
SKU: 608583
Availability: InStock
Rating: 5 (635 reviews)

Part No	IXTP02N50D
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 200MA TO220AB
Datasheet	IXTP02N50D Datasheet
Sample
ECAD Module

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Shipping Information

Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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Pricing & Ordering $14.214

Quantity

Unit Price

Ext. Price

$17.3200

$51.960

$14.2120

$113.696

11+

$13.7680

$151.448

16+

$13.3230

$213.168

20+

$12.8790

$257.580

26+

$11.5470

$300.222

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Availability: 5,000 pieces

MOQ: 3 pcs

Order Increment : 1 pcs

Qty:

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Products specifications

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	Depletion
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	30Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id	5V @ 25µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120 pF @ 25 V
FET Feature	Depletion Mode
Power Dissipation (Max)	1.1W (Ta), 25W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	IXTP02
Standard Package	50 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	608583-IXTP02N50D
Fake Threat In the Open Market	57pct.

Description

The IXTP02N50D is a N-Channel depletion mode MOSFET designed for high voltage applications. With a drain to source voltage (Vdss) of 500V and a continuous drain current (Id) of 200mA, this MOSFET offers reliable performance in a variety of circuit designs. It has a low on-resistance (Rds On) of 30Ohm at 50mA and 0V gate-source voltage (Vgs), ensuring efficient power transfer. The IXTP02N50D is housed in a TO-220-3 package, making it suitable for through-hole mounting. It has a maximum power dissipation of 1.1W at ambient temperature (Ta) and 25W at case temperature (Tc). This MOSFET operates in a wide temperature range of -55°C to 150°C, making it suitable for various industrial and automotive applications. The IXTP02N50D is an active product from IXYS, a leading manufacturer of discrete semiconductor products.