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Littelfuse Introduces New Extended Silicon Carbide Schottky Diode Family to Reduce Switching Losses for Increased Efficiency and Durability

2018年2月7日

The LSIC2SD120A08 series, LSIC2SD120A15 series and LSIC2SD120A20 series are rated for 8A, 15A, 20A, respectively, and are available in the mainstream TO-220-2L package. In addition, the LSIC2SD120C08 family is rated at 8A and is available in TO-252-2L package. Generation 2 Schottky diodes combine the p-n Schottky (MPS) device architecture to ensure increased surge immunity and reduced leakage current. Replacing standard silicon bipolar power diodes with the new Gen 2 silicon carbide Schottky diodes enables circuit designers to significantly reduce switching losses and withstand high inrush currents while avoiding thermal runaway and operate at up to 175 ° C junction temperature operation. This helps to greatly increase the efficiency and durability of power electronics systems.

Typical new 2nd Generation SiC Schottky diodes include:

· Active Power Factor Correction (PFC)

· DC-DC converter buck or boost phase

· Inverter-level freewheeling diode

· High-frequency output rectifier

Available markets include industrial power supplies, solar energy, industrial motor drives, welding and plasma cutting, electric vehicle charging stations, induction cooker and more.

"The latest generation silicon carbide Schottky diode 2 enables circuit designers to reduce switching losses, withstand high inrush currents while avoiding thermal runaway, and operate at higher junction temperatures." Littelfuse Power Michael Ketterer, semiconductor global product marketing manager, said. "They provide more choice of components for circuit designers looking to improve the efficiency, reliability and thermal management of the latest power electronics systems."

The second generation silicon carbide Schottky diodes provide the following key advantages:

• Best-in-class capacitance storage charge and negligible reverse recovery current make these devices ideal for high frequency power switching applications, ensuring extremely low switching losses and reducing stress on opposing switches.

Best-in-class forward voltage drop (VF) ensures low conduction loss.

· 175 ° C maximum junction temperature provides greater design margin and more relaxed thermal management requirements.

Author:Brittany Antonia (The author of article owns the copyright.)