Naina Semiconductor ltd.

Texas Instruments announced two new high-speed Gallium Nitride (GaN) Field-Effect Transistor (FET) drivers to further expand its industry-leading GaN power product portfolio for LIDAR and 5G RF (RF) ) Speed-critical applications such as envelope tracking enable more efficient, higher performance designs. The LMG1020 and LMG1210 can increase the efficiency while providing a switching frequency of 50 MHz, and can achieve a 5x smaller size solution that previous silicon MOSFETs cannot achieve.

Texas Instruments has introduced two new 4V to 36V power modules that measure only 3.0 mm by 3.8 mm and require only two external components to operate. The efficiency of the 0.5A LMZM23600 and 1A LMZM23601 DC/DC buck converters is as high as 92% to minimize energy loss. The miniature MicroSiPTM package used reduces board space by 58%. These converters extend TI's power module portfolio and can be used for up to 1A performance-driven, space-constrained communications and industrial designs, including field transmitters, ultrasound scanners, and network security cameras.