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PMN70XPEAX

Part No PMN70XPEAX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V SC-74
Datasheet
PMN70XPEAX Datasheet
Sample
ECAD Module ECAD
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Pricing & Ordering $1.432 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
22+
$2.2990
$50.578
53+
$1.8870
$100.011
83+
$1.8280
$151.724
114+
$1.7690
$201.666
147+
$1.7100
$251.370
196+
$1.5330
$300.468
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 44,600 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 7.8nC @ 4.5V
Max Input Capacitance 602pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 500mW (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 1089716-PMN70XPEAX
Popularity Medium
Fake Threat In the Open Market 59 pct.
Supply and Demand Status Sufficient

Description

The Nexperia USA Inc. PMN70XPEAX is a P-channel MOSFET with a drain-source breakdown voltage of 20V. It has a continuous drain current of 3.2A at 25°C and a gate-source threshold voltage of 1.25V at 250μA. The maximum Rds On at Id, Vgs is 85 mOhm at 2A and 4.5V. This component has a maximum gate-source voltage of ±12V and a maximum gate charge of 7.8nC at 4.5V. It is suitable for use in various discrete semiconductor applications.

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