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BVSS123LT1G

MOSFET N-CH 100V 170MA SOT-23-3
Manufacturer: ON Semiconductor
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Availability: 48,462 In Stock
BVSS123LT1G, produced by ON Semiconductor, is a N-Channel MOSFET transistor in SOT-23-3 SMD (SMT) package. The features include 100V drain-source breakdown voltage, 170mA (Ta) continuous drain current at 25°C ,2.8V @ 1mA gate-source threshold voltage. BVSS123LT1G is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Win Source Part Number 1025478-BVSS123LT1G
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 6 Ohm @ 100mA, 10V
Power Dissipation (Max) 225mW (Ta)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 20pF @ 25V
Gate-Source Threshold Voltage 2.8V @ 1mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 170mA (Ta)
Drain-Source Breakdown Voltage 100V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer ON Semiconductor
Categories Discrete Semiconductor Products
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Products specifications
Win Source Part Number 1025478-BVSS123LT1G
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 6 Ohm @ 100mA, 10V
Power Dissipation (Max) 225mW (Ta)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 20pF @ 25V
Gate-Source Threshold Voltage 2.8V @ 1mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 170mA (Ta)
Drain-Source Breakdown Voltage 100V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer ON Semiconductor
Categories Discrete Semiconductor Products
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