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NSS60601MZ4T1G

Part No : NSS60601MZ4T1G
Manufacturer : ON Semiconductor
Catalog : Transistors(BJT) - Single
Description : TRANS NPN 60V 6A SOT-223
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 43,810 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Supply and Demand Status Sufficient
Fake Threat In the Open Market 60 pct.
Popularity Medium
Win Source Part Number 1083646-NSS60601MZ4T1G
Case / Package SOT-223
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Frequency - Transition 100MHz
Maximum Power Dissipation 800mW
Typical Gain (hFE) (Min) 120 @ 1A, 2V
Collector Cut-off Current(Max) 100nA (ICBO)
Max Vce (sat) 300mV @ 600mA, 6A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Maximum Current Collector 6A
Transistor Polarity NPN
Status Active
Packaging Reel - TR
Manufacturer ON Semiconductor
Categories Discrete Semiconductor Products
The NSS60601MZ4T1G from ON Semiconductor is NPN Transistors(BJT) - Single device , available on SOT-223 Reel - TR, with 120 @ 1A, 2V hFR, rated for operation over temperature range from -55°C to 150°C (TJ).The maximum of V(br)CEO ,VCE ,Current Collector and Power Dissipation are 60V, 300mV @ 600mA, 6A, 6A and 800mW.
Products specifications
ECAD Module
Supply and Demand Status Sufficient
Fake Threat In the Open Market 60 pct.
Popularity Medium
Win Source Part Number 1083646-NSS60601MZ4T1G
Case / Package SOT-223
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Frequency - Transition 100MHz
Maximum Power Dissipation 800mW
Typical Gain (hFE) (Min) 120 @ 1A, 2V
Collector Cut-off Current(Max) 100nA (ICBO)
Max Vce (sat) 300mV @ 600mA, 6A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Maximum Current Collector 6A
Transistor Polarity NPN
Status Active
Packaging Reel - TR
Manufacturer ON Semiconductor
Categories Discrete Semiconductor Products
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