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NVD5802NT4G-VF01

Part No : NVD5802NT4G-VF01
Manufacturer : ON Semiconductor
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 40V 16.4A DPAK
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 40,039 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Supply and Demand Status Sufficient
Fake Threat In the Open Market 51 pct.
Popularity Medium
Win Source Part Number 1084108-NVD5802NT4G-VF01
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package DPAK-3
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 50A, 10V
Power Dissipation (Max) 2.5W (Ta), 93.75W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 5300pF @ 12V
Max Gate Charge 100nC @ 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Continuous Drain Current at 25°C 16.4A (Ta), 101A (Tc)
Drain-Source Breakdown Voltage 40V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer ON Semiconductor
Categories Discrete Semiconductor Products
NVD5802NT4G-VF01, produced by ON Semiconductor, is a N-Channel MOSFET transistor in DPAK-3 SMD (SMT) package. The features include 40V drain-source breakdown voltage, 16.4A (Ta), 101A (Tc) continuous drain current at 25°C ,3.5V @ 250μA gate-source threshold voltage. NVD5802NT4G-VF01 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Supply and Demand Status Sufficient
Fake Threat In the Open Market 51 pct.
Popularity Medium
Win Source Part Number 1084108-NVD5802NT4G-VF01
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package DPAK-3
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 50A, 10V
Power Dissipation (Max) 2.5W (Ta), 93.75W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 5300pF @ 12V
Max Gate Charge 100nC @ 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Continuous Drain Current at 25°C 16.4A (Ta), 101A (Tc)
Drain-Source Breakdown Voltage 40V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer ON Semiconductor
Categories Discrete Semiconductor Products
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NVD5802NT4G-VF01 Transistors - FETs, MOSFETs - RF

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