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NVTFS4823NTAG

MOSFET N-CH 30V 13A 8WDFN
Manufacturer: ON Semiconductor
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Availability: 22,363 In Stock
NVTFS4823NTAG, produced by ON Semiconductor, is a N-Channel MOSFET transistor in 8-WDFN (3.3x3.3) SMD (SMT) package. The features include 30V drain-source breakdown voltage, 13A (Ta) continuous drain current at 25°C ,2.5V @ 250μA gate-source threshold voltage. NVTFS4823NTAG is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 750pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 21W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-WDFN (3.3x3.3)
Dimension 8-PowerWDFN
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1084152-NVTFS4823NTAG
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 750pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 21W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-WDFN (3.3x3.3)
Dimension 8-PowerWDFN
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1084152-NVTFS4823NTAG
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NVTFS4823NTAG Datasheet
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NVTFS4823NTAG Transistors - FETs, MOSFETs - RF

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