The Alpha & Omega Semiconductor Inc. Alpha IGBT TO-220-3 package is a high-performance N-channel MOSFET designed for various applications. With a maximum power of 214W and a voltage collector-emitter breakdown of 650V, this MOSFET is suitable for use in discrete semiconductor products. It has a maximum Vce(on) of 2.15V @ 15V, 15A and a gate charge of 32nC. The AOT15B65M1 family name MOSFET has a current collector of 30A and a switching energy of 290μJ (on), 200μJ (off). It is halogen-free compliant and has an estimated EOL date of 2028.