E4D20120G

Part No E4D20120G
Manufacturer Cree/Wolfspeed
Catalog Schottky Diodes
Description 1200 V 20 A SCHOTTKY DIODE (SING / Diode Silicon Carbide Schottky 1200 V 56A (DC) Surface Mount TO-263-2
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Wolfspeed, Inc.
Series E-Series, Automotive
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 56A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 20 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 200 µA
Capacitance @ Vr, F 1474pF @ 0V, 1MHz
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263-2
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number E4D20120
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names 1697-E4D20120G
Standard Package 50
Win Source Part Number 1056673-E4D20120G
Alternative Parts
(Cross-Reference)

Description

The Wolfspeed E4D20120G is a silicon carbide Schottky diode that belongs to the E-Series, Automotive category. The diode has no recovery time and is packaged in a tube package that can be mounted through SMD (SMT). It has a voltage rating of 1200V and can handle an average rectified current of 56A (DC). The diode has a reverse recovery time of 0ns and a capacitance of 1474pF at 0V, 1MHz. The E4D20120G has an operating temperature range of -55°C to 175°C and has an ECCN of EAR99. The HTSUS code for this diode is 8541.10.0080.

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