S29PL127J65BAI000

Part No S29PL127J65BAI000
Manufacturer Cypress Semiconductor Corp
Catalog Memory
Description IC FLASH 128MBIT PARALLEL 80FBGA / FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 65 ns 80-FBGA (8x11)
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series PL-J
Package Tray
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 128Mb (8M x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 65ns
Access Time 65 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 80-VFBGA
Supplier Device Package 80-FBGA (8x11)
RoHS Status RoHS non-compliant
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Standard Package 210
Win Source Part Number 1201897-S29PL127J65BAI000

Description

The Cypress Semiconductor Corp 1201897-S29PL127J65BAI000 integrated circuit is a non-volatile memory module with a capacity of 128Mb (8M x 16) and a flash-nor technology. The memory type is designed for parallel memory interfaces with an access time of 65 ns and a voltage supply range of 2.7V to 3.6V. The package comes with a standard package of 210, and the package/case is 80-VFBGA. The device has a write cycle time of 65ns and is ECCN 3A991B1A compliant. It is MSL Level 3 (168 Hours) and REACH unaffected. The product is obsolete and RoHS non-compliant.

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