ZXM61N03FTA

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Part No ZXM61N03FTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.4A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.1nC @ 10V
Max Input Capacitance 150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 910mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 036917-ZXM61N03FTA
Family Name ZXM61N03F
Introduction Date July 22, 1999
ECCN EAR99
Country of Origin China, Germany
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

Introducing the ZXM61N03FTA from Diodes Incorporated

The ZXM61N03FTA is a high-performance, N-channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This compact and efficient MOSFET is designed to meet the needs of a wide range of applications, offering power management solutions that are both energy-efficient and reliable.

With its SOT-23 package, the ZXM61N03FTA is ideal for space-constrained applications, providing a perfect balance between size and performance. The device features a low on-resistance (RDS(on)) of just 70mΩ at VGS = 10V, which ensures minimal power loss and heat generation during operation, thereby enhancing system reliability and performance.

The ZXM61N03FTA is capable of handling continuous drain currents up to 1.3A, making it suitable for high-density power applications. The MOSFET operates over a wide range of gate-source voltages, from 2.5V to 10V, allowing for flexible design options and compatibility with various drive circuits. This versatility makes the ZXM61N03FTA an excellent choice for use in power management circuits, DC-DC converters, load switches, and other power-related applications.

Additional features of the ZXM61N03FTA include fast switching speeds, which contribute to improved efficiency in switching applications, and a low threshold voltage that enables operation at lower voltages, further reducing power consumption. The device also offers robust thermal performance, with a maximum junction temperature of 150°C, ensuring stable operation even under high temperature conditions.

Diodes Incorporated has designed the ZXM61N03FTA with safety in mind, incorporating built-in protection against electrostatic discharge (ESD). This ESD protection enhances the durability of the MOSFET and ensures a longer lifespan for the end product.

In summary, the ZXM61N03FTA from Diodes Incorporated is a powerful, efficient, and reliable MOSFET that is well-suited for a variety of applications requiring high-density power control. Its low on-resistance, high current handling capability, and compact form factor make it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
420+ $0.1787 $75.0540
1,025+ $0.1467 $150.3675
1,585+ $0.1421 $225.2285
2,185+ $0.1376 $300.6560
2,825+ $0.1329 $375.4425
3,780+ $0.1191 $450.1980
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 75,000 pieces
MOQ: 420 pcs
Order Increment : 1 pcs
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