FQPF15P12

Part No FQPF15P12
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 120V 15A TO-220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 41W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1039903-FQPF15P12
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs

Description

The Fairchild/ON Semiconductor FQPF15P12 is a P-channel MOSFET designed for use in a variety of applications. With a maximum drain-source breakdown voltage of 120V and a continuous drain current of 15A (Tc), this MOSFET offers a low on-resistance of 200 mOhm @ 7.5A, 10V. The FQPF15P12 has a gate-source threshold voltage of 4V @ 250μA and a maximum gate charge of 38nC @ 10V. This MOSFET is housed in a TO-220F package and can operate in temperatures ranging from -55°C to 175°C. The FQPF15P12 is a medium popularity part in the market.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
65+ $0.8130 $52.8450
150+ $0.6670 $100.0500
235+ $0.6460 $151.8100
320+ $0.6250 $200.0000
415+ $0.6050 $251.0750
555+ $0.5420 $300.8100
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 5,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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