G3R160MT12D

Part No G3R160MT12D
Manufacturer GeneSiC Semiconductor
Catalog FETs - Single
Description SIC MOSFET N-CH 22A TO247-3
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202886-G3R160MT12D
Manufacturer GeneSiC Semiconductor
Category Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Series G3R™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole

Description

The G3R™ is a single N-channel SiCFET (Silicon Carbide Field-Effect Transistor) from GeneSiC Semiconductor. It is designed for high-power applications and operates with a drain-to-source voltage (Vdss) of 1200V. With an operating temperature range of -55°C to 175°C, it can withstand extreme conditions. The G3R™ is mounted through hole and comes in a tube package, ensuring easy installation. This transistor is an active product suitable for applications that require high voltage handling capabilities.

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