The G3R™ is a single N-channel SiCFET (Silicon Carbide Field-Effect Transistor) from GeneSiC Semiconductor. It is designed for high-power applications and operates with a drain-to-source voltage (Vdss) of 1200V. With an operating temperature range of -55°C to 175°C, it can withstand extreme conditions. The G3R™ is mounted through hole and comes in a tube package, ensuring easy installation. This transistor is an active product suitable for applications that require high voltage handling capabilities.