G3R40MT12D

Part No G3R40MT12D
Manufacturer GeneSiC Semiconductor
Catalog FETs - Single
Description SIC MOSFET N-CH 71A TO247-3
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202887-G3R40MT12D
Manufacturer GeneSiC Semiconductor
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Mounting Type Through Hole
Supplier Device Package TO-247-3

Description

The GeneSiC Semiconductor SiCFET is a high-performance N-Channel MOSFET designed for discrete semiconductor applications. With a drain-to-source voltage (Vdss) of 1200V, this MOSFET offers excellent power handling capabilities. It features a TO-247-3 package, allowing for easy installation and mounting. The SiCFET utilizes silicon carbide technology, providing superior performance and reliability compared to traditional silicon-based transistors. It is an active product, meaning it is currently available for purchase and implementation in various applications. The SiCFET is suitable for through-hole mounting and is commonly used in power electronics, industrial automation, and renewable energy systems.

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