The GeneSiC Semiconductor SiCFET is a high-performance N-Channel MOSFET designed for discrete semiconductor applications. With a drain-to-source voltage (Vdss) of 1200V, this MOSFET offers excellent power handling capabilities. It features a TO-247-3 package, allowing for easy installation and mounting. The SiCFET utilizes silicon carbide technology, providing superior performance and reliability compared to traditional silicon-based transistors. It is an active product, meaning it is currently available for purchase and implementation in various applications. The SiCFET is suitable for through-hole mounting and is commonly used in power electronics, industrial automation, and renewable energy systems.