IGP20N65F5XKSA1

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Part No IGP20N65F5XKSA1
Manufacturer Infineon Technologies
Catalog PMIC - Power Management - Specialized
Description IGBT TRENCH 650V 42A TO220-3 / IGBT Trench 650 V 42 A 125 W Through Hole PG-TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Series TrenchStop™
Package Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 42 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Power - Max 125 W
Switching Energy 160µJ (on), 60µJ (off)
Input Type Standard
Gate Charge 48 nC
Td (on/off) @ 25°C 20ns/165ns
Test Condition 400V, 10A, 32Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3
Base Product Number IGP20N65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001132998,2156-IGP20N65F5XKSA1,IFEINFIGP20N65F5XKSA1
Standard Package 500
Win Source Part Number 1064772-IGP20N65F5XKSA1
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

The TrenchStop™ series IGBT, with Win Source Part Number 1064772-IGP20N65F5XKSA1, is a high-performance semiconductor device that is ideal for use in various applications requiring high voltage and current handling capabilities.

  • Type: trench type
  • Voltage Breakdown Capacity: 650 V
  • Maximum Collector Current: 42 A
  • Maximum Collector Pulsed Current: 60 A
  • Maximum Collector-Emitter Voltage @ 15V, 20A: 2.1V
  • Switching Energy (on): 160µJ
  • Switching Energy (off): 60µJ
  • Gate Charge: 48 nC
  • Temperature Range: -40°C to 175°C
  • Package: tube
  • Standard Package: 500 units

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