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IKD04N60RF

Part No IKD04N60RF
Manufacturer Infineon Technologies
Catalog Electronic Surplus
Description “RC-D Fast”: RC-Drives IGBT optimized for high switching frequency | IGBT 600V 8A 75W TO252-3
Sample
Rohs State Need to verify
ECAD Module ECAD

Shipping Information

Shipped from HK warehouse
Expected Shipping Date
Ship today if order in (HKT)
Supplier Lead-Time Call for availability
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Pricing & Ordering $1.5592 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
25+
$2.0670
$51.675
59+
$1.6960
$100.064
92+
$1.6430
$151.156
126+
$1.5900
$200.340
163+
$1.5370
$250.531
218+
$1.3780
$300.404
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 55,950 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 8A
Current - Collector Pulsed (Icm) 12A
Vce(on) (Maximum) at Vge, Ic 2.5V at 15V, 4A
Maximum Power 75W
Switching Energy 110μJ
Input Type Standard
Gate Charge 27nC
Td (on/off) at 25°C 12ns/116ns
Test Condition 400V, 4A, 43Ohm, 15V
Reverse Recovery Time (trr) 34ns
Temperature Range - Operating -40°C ~ 175°C
Mounting Style SMD
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Family Part Number *KD04N60
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1185361-IKD04N60RF
Manufacturer Homepage www.infineon.com
Popularity Medium
Fake Threat In the Open Market 56 pct.
Supply and Demand Status Limited

Description

The Infineon Technologies 1185361-IKD04N60RF is a high-performance IGBT transistor component that is packaged in reel. This component is obsolete and has a medium popularity of 56%. It has a limited supply and demand status. The component has a voltage collector emitter breakdown of 600V and a maximum power of 75W. The switching energy for this component is 110μJ. It is a great choice for discrete semiconductor products.

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