IPB160N08S403ATMA1

Part No IPB160N08S403ATMA1
Manufacturer Infineon Technologies
Catalog PMIC - Power Management - Specialized
Description MOSFET N-CH 80V 160A TO263-7 / N-Channel 80 V 160A (Tc) 208W (Tc) Surface Mount PG-TO263-7-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7750 pF @ 25 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number IPB160N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000989092
Standard Package 1,000
Win Source Part Number 1013984-IPB160N08S403ATMA1

Description

The IPB160N08S403ATMA1 is a discrete semiconductor product - transistor FET manufactured by Infineon Technologies. It is an N-channel type device with a drain to source voltage (Vdss) of 80 V and a current - continuous drain (Id) @ 25°C of 160A (Tc).

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