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Same model may have multiple batches, images only for reference.
IPB80N08S406ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB80N08S406ATMA1

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Part No IPB80N08S406ATMA1
Manufacturer Infineon Technologies
Catalog PMIC - Power Management - Specialized
Description MOSFET N-CH 80V 80A TO263-3 / N-Channel 80 V 80A (Tc) 150W (Tc) Surface Mount PG-TO263-3-2
Datasheet
IPB80N08S406ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

ECCN EAR99
HTSUS 8541.29.0095
Other Names INFINFIPB80N08S406ATMA1,2156-IPB80N08S406ATMA1,SP000984296
Standard Package 1,000
Win Source Part Number 1065230-IPB80N08S406ATMA1
REACH Status REACH Unaffected
MSL Level 1 (Unlimited)
Base Product Number IPB80N
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Mounting SMD (SMT)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Power Dissipation (Max) 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
Vgs (Max) ±20V
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs(th) (Max) @ Id 4V @ 90µA
Rds On (Max) @ Id, Vgs 5.5mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drain to Source Voltage (Vdss) 80 V
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Product Status Obsolete
Package Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Mfr Infineon Technologies
Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

It is unaffected by REACH and has an HTSUS of 8541.29.0095.

  • Type: N-Channel MOSFET
  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 80A
  • Rds On (Max) @ 80A and 10V: 5.5mOhm
  • Gate Charge @ 10V: 70nC
  • Input Capacitance @ 25V: 4800pF
  • Operating Temperature Range: -55°C to 175°C
  • Suitable for: automotive applications

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