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Same model may have multiple batches, images only for reference.
IPD35CN10NG Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD35CN10NG

Part No IPD35CN10NG
Manufacturer Infineon Technologies
Catalog Electronic Surplus
Description OptiMOS2 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186131-IPD35CN10NG
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance

Description

The IPD35CN10NG is a medium-popularity MOSFET designed and manufactured by Infineon Technologies. This MOSFET has a high switching speed and is suitable for use in applications such as DC-DC converters and power management in portable devices. It has a low on-state resistance of 35mΩ at a gate-source voltage of 10V. The IPD35CN10NG has an integrated Schottky diode, which reduces power losses and improves efficiency.

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