The Infineon Technologies 069068-IPP60R074C6 is an N-Channel MOSFET designed for use in discrete semiconductor products. It is mounted through hole and packaged in PG-TO-220-3. This MOSFET has a power dissipation of 480.8W (Tc) and a drain-source breakdown voltage of 600V. It also has a continuous drain current of 57.7A at 25°C, a gate-source threshold voltage of 3.5V @ 1.4mA, and a maximum gate charge of 138nC @ 10V. Additionally, it has a maximum input capacitance of 3020pF @ 100V and a maximum Rds On at Id,Vgs of 74 mOhm @ 21A, 10V. The supply and demand status is limited.