IXFH140N10P

Part No IXFH140N10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 140A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Supply and Demand Status Balance
Popularity Medium
Win Source Part Number 1049372-IXFH140N10P
Dimension TO-247-3
Case / Package TO-247AD (IXFH)
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 11 mOhm @ 70A, 10V
Power Dissipation (Max) 600W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 4700pF @ 25V
Max Gate Charge 155nC @ 10V
Gate-Source Threshold Voltage 5V @ 4mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 140A (Tc)
Drain-Source Breakdown Voltage 100V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer IXYS
Categories Discrete Semiconductor Products

Description

The IXYS IXFH140N10P is a MOSFET with an N-Channel polarity. It has a power dissipation of 600W (Tc) and a drain-source breakdown voltage of 100V. This MOSFET has a continuous drain current of 140A (Tc) and a maximum Rds On at Id,Vgs of 11 mOhm @ 70A, 10V. It has a gate-source threshold voltage of 5V @ 4mA and a maximum gate charge of 155nC @ 10V. The maximum input capacitance of this MOSFET is 4700pF @ 25V and the maximum gate-source voltage is ±20V. It is mountable through hole and comes in a TO-247-3 package type. The temperature range for operating this MOSFET is -55°C to 175°C (TJ). It falls under the Discrete Semiconductor Products category and has a popularity of medium in the market. This MOSFET is active and is packaged in a tube/rail.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
7+ $8.2104 $57.4728
14+ $7.6807 $107.5298
21+ $7.4159 $155.7339
30+ $6.8862 $206.5860
38+ $6.6213 $251.6094
48+ $6.3565 $305.1120
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 2,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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