IXTN120P20T

Part No IXTN120P20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 106A SOT227B / P-Channel 200 V 106A (Tc) 830W (Tc) Chassis Mount SOT-227B
Datasheet
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 740 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 73000 pF @ 25 V
Power Dissipation (Max) 830W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXTN120
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1324569-IXTN120P20T

Description

The IXYS IXTN120P20T is a MOSFET (Metal Oxide) P-Channel discrete semiconductor product with a chassis mount and SOT-227B supplier device package. The MOSFET has a drain to source voltage (Vdss) of 200 V and a continuous drain current (Id) of 106A (Tc) at 25°C. The MOSFET has a maximum Rds On of 30mOhm @ 60A, 10V and a maximum Vgs(th) of 4.5V @ 250μA. The MOSFET has a power dissipation (Max) of 830W (Tc) and a gate charge (Qg) (Max) @ Vgs of 740 nC @ 10 V. The MOSFET has an input capacitance (Ciss) (Max) @ Vds of 73000 pF @ 25 V. The MOSFET is RoHS3 compliant.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
1+ $65.7224 $65.7224
2+ $53.9261 $107.8522
3+ $52.2409 $156.7227
4+ $50.5557 $202.2228
6+ $48.8706 $293.2236
7+ $43.8150 $306.7050
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 900 pieces
Order Increment : 1 pcs
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