APT5010B2LLG

Part No APT5010B2LLG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 46A T-MAX / Trans MOSFET N-CH 500V 46A 3-Pin(3+Tab) T-MAX Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 7
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 95nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4360pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 520W (Tc)
Rds On (Maximum) @ Id, Vgs 100 mOhm @ 23A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 768697-APT5010B2LLG
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT5010B2LL
Introduction Date March 01, 2001
ECCN EAR99
Estimated EOL Date 2025
Alternative Parts
(Cross-Reference)
SiHFPS40N50L; IRFPS40N50LPBF;  SiHFPS40N50L-E3; IRFPS40N50L;  

Description

The Microsemi Corporation 768697-APT5010B2LLG is a MOSFET transistor designed for use in discrete semiconductor products. This transistor has a maximum power dissipation of 520W (Tc) and a maximum drain-source voltage of 500V. It has a continuous drain current of 46A (Tc) and a gate charge of 95nC @ 10V. The transistor has a channel type of N and a maximum Vgs of ±30V. It is mounted using a through-hole package and is available in a TO-247-3 Variant supplier device package. and a limited supply and demand status. The alternative parts (cross-reference) are SiHFPS40N50L, IRFPS40N50LPBF, SiHFPS40N50L-E3, and IRFPS40N50L.

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