2N3055G

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Part No 2N3055G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 15A TO3
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tray
Status Active
Transistor Polarity NPN
Maximum Current Collector 15A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 3V @ 3.3A, 10A
Collector Cut-off Current(Max) 700μA
Typical Gain (hFE) (Min) 20 @ 4A, 4V
Maximum Power Dissipation 115W
Frequency - Transition 2.5MHz
Temperature Range - Operating -65°C to 200°C (TJ)
Mounting Through Hole
Case / Package TO-3
Win Source Part Number 123246-2N3055G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

ON Semiconductor 2N3055G Power Transistor

The 2N3055G is a highly versatile NPN bipolar junction transistor (BJT) from ON Semiconductor, renowned for its reliability and robust performance in a wide range of power applications. Designed for general-purpose switching and amplifier applications, this transistor is a staple component in electronic circuits, offering a perfect blend of high power and efficiency.

With a collector-emitter voltage (VCEO) of 60V and collector current capability of up to 15A, the 2N3055G is well-suited for linear amplification and switching applications where moderate power levels are required. Its maximum power dissipation of 115W ensures that it can handle significant thermal loads, making it an excellent choice for power regulators, power amplifiers, and motor control circuits.

The 2N3055G boasts a transition frequency (fT) of 2.5MHz, providing a good frequency response for audio and other low-frequency applications. Its rugged construction and high safe operating area (SOA) ensure that it can withstand occasional voltage spikes and current overloads without failing, making it a reliable choice for demanding environments.

ON Semiconductor has packaged this transistor in a TO-3 metal can, which provides excellent thermal conduction and durability. The TO-3 package also allows for easy mounting onto heat sinks, which is essential for applications that generate a lot of heat. This package ensures that the 2N3055G can maintain stable performance even under high temperature operating conditions.

For designers and engineers looking for a tried-and-true power transistor that can deliver consistent performance, the 2N3055G from ON Semiconductor is an excellent option. Its combination of power handling, efficiency, and reliability makes it a go-to component for a variety of power applications. Whether it's for prototyping or mass production, the 2N3055G is a component that you can depend on for your electronic designs.

As with all electronic components, please refer to the official ON Semiconductor datasheets for complete technical specifications and ensure compliance with all applicable safety and regulatory standards when integrating the 2N3055G into your projects.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
8+ $7.8203 $62.5624
18+ $6.4167 $115.5006
28+ $6.2162 $174.0536
39+ $6.0157 $234.6123
50+ $5.8151 $290.7550
67+ $5.2136 $349.3112
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 283 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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