NTH4L060N065SC1

Part No NTH4L060N065SC1
Manufacturer ON Semiconductor
Catalog FETs - Single
Description SIC MOS TO247-4L 650V
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202837-NTH4L060N065SC1
Manufacturer onsemi
Category Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 176W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole

Description

The NTH4L060N065SC1 is a high-performance, N-Channel Silicon Carbide (SiC) MOSFET brought to you by ON Semiconductor. This cutting-edge power semiconductor device is designed to cater to the demanding needs of modern energy-efficient power conversion systems. With its Silicon Carbide technology, the NTH4L060N065SC1 offers superior characteristics over traditional silicon-based MOSFETs.

Key Features

  • Low On-Resistance: The device boasts an ultra-low on-resistance (RDS(on)) of just 60 mΩ, which significantly reduces conduction losses and improves overall efficiency.
  • High Breakdown Voltage: With a drain-to-source breakdown voltage (VDS) of 650V, this MOSFET can handle high voltage applications with ease.
  • Fast Switching Speed: The fast intrinsic diode with low reverse recovery charge (Qrr) ensures swift switching performance, which is critical for high-frequency power converters.
  • High-Temperature Operation: The NTH4L060N065SC1 is capable of operating at junction temperatures (TJ) up to 175°C, making it suitable for harsh environments and thermally challenging applications.

Applications

This SiC MOSFET is ideal for a variety of applications that require high efficiency and power density, including:

  • Electric vehicle (EV) chargers
  • Power supplies for servers and telecom systems
  • Solar inverters
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)

Product Benefits

The NTH4L060N065SC1 offers numerous advantages for designers. Its low on-resistance minimizes conduction losses, while the high breakdown voltage allows for reliable operation in high-voltage circuits. The device's fast switching capabilities enable high-efficiency power conversion, which is essential for reducing energy consumption and heat generation in electronic systems. Additionally, the robust construction ensures long-term reliability even in extreme conditions.

Environmental Compliance

ON Semiconductor is committed to environmental sustainability. The NTH4L060N065SC1 is RoHS compliant, ensuring that it meets the European Union's restrictions on the use of certain hazardous substances in electrical and electronic equipment.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
5+ $12.1127 $60.5635
9+ $11.3313 $101.9817
14+ $10.9406 $153.1684
20+ $10.1591 $203.1820
26+ $9.7684 $253.9784
32+ $9.3776 $300.0832
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 12 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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