SCTWA60N120G2-4

Part No SCTWA60N120G2-4
Manufacturer STMicroelectronics
Catalog FETs - Single
Description SILICON CARBIDE POWER MOSFET 120
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Win Source Part Number WS1202301-SCTWA60N120G2-4
Manufacturer STMicroelectronics
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Power Dissipation (Max) 388W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4

Description

STMicroelectronics SCTWA60N120G2-4 Silicon Carbide Power MOSFET

The SCTWA60N120G2-4 is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a global semiconductor leader. This high-performance power MOSFET is designed to meet the efficiency and reliability demands of modern high-power switching applications. With its advanced material properties, the SCTWA60N120G2-4 offers superior performance compared to traditional silicon-based MOSFETs.

Featuring a robust and reliable construction, the SCTWA60N120G2-4 boasts a wide bandgap, which enables operation at higher temperatures, voltages, and frequencies. This makes it an ideal choice for applications such as electric vehicles, solar inverters, switch-mode power supplies, and other energy-efficient power conversion systems.

The SCTWA60N120G2-4 is characterized by its low on-resistance (RDS(on)) and reduced switching losses. These features contribute to its exceptional efficiency, helping to minimize energy waste and heat generation. The device's high current handling capability and fast switching speeds are instrumental in improving the performance and compactness of power electronic systems.

Key Specifications:

  • Drain-source voltage (VDS): 1200 V
  • Continuous drain current (ID): 60 A
  • Low on-resistance (RDS(on)): Minimized for high-efficiency operation
  • Gate charge (Qg): Optimized for fast switching
  • Max junction temperature (Tj): High for robust performance

The SCTWA60N120G2-4 also prioritizes user safety and device longevity with its built-in protection features. It includes an integrated body diode, which provides inherent diode recovery and reverse conduction protection, enhancing the reliability of the overall system.

STMicroelectronics has engineered the SCTWA60N120G2-4 to be compatible with standard gate driving voltages, making it easy to integrate into existing designs without the need for extensive modifications. Its TO-247-4L package ensures efficient thermal management and simplifies the mounting process.

By choosing the SCTWA60N120G2-4 for your power conversion needs, you are opting for a MOSFET that delivers top-tier performance, energy efficiency, and reliability, backed by STMicroelectronics' commitment to innovation and quality.

You May Also Be Interested in

ON Semiconductor
SICFET N-CH 900V 118A TO247-3
Lowest to $24.0848
Infineon Technologies
SICFET N-CH 1.2KV 56A TO247-4
Lowest to $12.7903
Microchip Technology
MOSFET SIC 1200V 17 MOHM TO-268
Need more? Email Us
EPC
TRANS GAN 100V DIE 5.6MOHM
Lowest to $1.1118
Microchip Technology
TRANS SJT 1700V D3PAK
Lowest to $4.6926
Infineon Technologies
MOSFET N-CH 600V 109A TO247-4
Lowest to $15.6596
Diodes Incorporated
MOSFET P-CH 20V 2.5A SOT323 T&R
Lowest to $0.0498
Transforming Technologies, LLC
GANFET N-CH 650V 34A TO247-3
Lowest to $15.0730
Microchip Technology
MOSFET SIC 3300 V 400 MOHM TO-24
Need more? Email Us

Top Sellers

FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $3.6528
Texas Instruments
IC PWR SWITCH N-CHAN 1:1 SOT23-6 / 2.7-18-V, On-Resistance Load Switch With Thermal Protection
Lowest to $0.0753
STMicroelectronics
ACCEL 2-16G I2C/SPI 12LGA
Lowest to $0.2992
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $4.9513
Texas Instruments
DDR Termination Regulator 2.375V to 3.5V 10-Pin VSON EP T/R / IC REG SINK/SOURCE DDR 10-SON
Lowest to $0.1076
Bosch Sensortec
IMU ACCEL/GYRO/MAG I2C 28LGA / Intelligent 9-axis absolute orientation sensor
Lowest to $9.9917
Texas Instruments
IC REG LDO ADJ 0.15A 8MSOP
Lowest to $0.4584
Texas Instruments
IC CONV DDR DDR2 DDR3 10SON
Lowest to $0.1076
Texas Instruments
IC TXRX CAN 5V 8SOP
Lowest to $0.3875
Nordic Semiconductors
IC RF TXRX+MCU 802.15.4 73VFQFN
Lowest to $2.7125
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0327
Texas Instruments
IC BUS TRANSCVR TRI-ST SOT23-6
Lowest to $0.0861
Bourns Inc.
TVS DIODE 7VWM/12VWM SOT23
Lowest to $0.2583
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $1.8299
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $3.4444

Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
1+ $55.1572 $55.1572
3+ $45.2572 $135.7716
4+ $43.8429 $175.3716
5+ $42.4286 $212.1430
7+ $41.0143 $287.1001
9+ $36.7714 $330.9426
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Estimate shipping
Enter your destination to get a shipping estimate

*
Availability: 542 pieces
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
Expected Shipping Date
Ship today if order in (HKT)
Supplier Lead-Time Call for availability
Estimate shipping fee
Enter your destination to get a shipping estimate
Estimate Shipping Fee

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net and winsourceelec.com

More details about fraud prevention