VNS3NV04DPTR-E

Part No VNS3NV04DPTR-E
Manufacturer STMicroelectronics
Catalog PMIC - Power Distribution Switches, Load Drivers
Description IC MOSFET OMNIFET 45V 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Integrated Circuits
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Switch Type General Purpose
Number of Outputs 2
Output Type N-Channel
Voltage - Load 36V (Max)
Supply Voltage - Operating Not Required
Current - Output (Max) 3.5A
Rds On (Typ) 120 mOhm (Max)
Input Type Non-Inverting
Fault Protection Current Limiting (Fixed), Over Temperature, Over Voltage
Temperature Range - Operating -40°C to 150°C (TJ)
Case / Package 8-SO
Win Source Part Number 130470-VNS3NV04DPTR-E
Family Name VNS3NV04DP
Introduction Date March 09, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
VNS3NV04DP-E;  

Description

STMicroelectronics VNS3NV04DPTR-E: A Robust Automotive-Grade Power MOSFET

The VNS3NV04DPTR-E from STMicroelectronics is a high-performance, automotive-grade Power MOSFET that is designed to meet the rigorous demands of the automotive industry. This compact, surface-mount device is part of STMicroelectronics' OMNIFET II™ family and is housed in a PowerSSO-8 package, providing a perfect balance of power density and reliability.

With its advanced technology, the VNS3NV04DPTR-E offers an extremely low on-resistance (RDS(on)) of just 40 mΩ at 10 V, minimizing conduction losses and improving overall efficiency. This feature, combined with a maximum current rating of 30 A, makes it an ideal choice for high-power applications where efficient power conversion is critical.

The device is characterized by its built-in clamping diode, which provides enhanced protection against inductive loads and ensures safe operation during the turn-off phase. This protection is critical in automotive environments where voltage spikes can be detrimental to electronic components.

The VNS3NV04DPTR-E is also equipped with 100% avalanche tested robustness, which guarantees reliable performance even under extreme conditions. This test ensures that the device can withstand high-energy pulses, making it suitable for applications that experience frequent power surges.

One of the standout features of this MOSFET is its logic level input, which allows for direct interfacing with microcontrollers, reducing the need for additional drivers. This simplifies the circuit design and helps to reduce system complexity and cost.

Other key specifications of the VNS3NV04DPTR-E include a broad operating voltage range, fast switching speeds, and a low gate charge. These characteristics make the MOSFET an excellent choice for a variety of automotive applications, such as solenoid and lamp drivers, motor control circuits, and power management systems.

Overall, the VNS3NV04DPTR-E from STMicroelectronics is a versatile and reliable component that delivers high performance in a compact form factor. Its robust design and advanced features make it a go-to choice for automotive engineers looking for a power MOSFET that can withstand the harsh conditions of automotive applications while maintaining high efficiency and reliability.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
30+ $1.7358 $52.0740
75+ $1.4243 $106.8225
110+ $1.3798 $151.7780
150+ $1.3353 $200.2950
195+ $1.2908 $251.7060
260+ $1.1573 $300.8980
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 20,011 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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