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Same model may have multiple batches, images only for reference.
SSM6N36FE,LM Real Image
Same model may have multiple batches, images only for reference.

SSM6N36FE,LM

Part No SSM6N36FE,LM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.5A ES6
Datasheet
SSM6N36FE,LM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 500mA
Maximum Rds On at Id,Vgs 630 mOhm @ 200mA, 5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 1.23nC @ 4V
Max Input Capacitance 46pF @ 10V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Win Source Part Number 097656-SSM6N36FE,LM
Popularity Medium
Supply and Demand Status Sufficient

Description

The Toshiba Semiconductor and Storage 097656-SSM6N36FE,LM is a 2 N-Channel (Dual) FET with a Logic Level Gate feature. It has a maximum power dissipation of 150mW and a drain-source breakdown voltage of 20V. This FET is designed for use in Discrete Semiconductor Products and can operate at temperatures up to 150°C (TJ). It comes in an ES6 (1.6x1.6) case/package and has a maximum Rds On of 630 mOhm at Id,Vgs: 200mA, 5V.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
355+ $0.1420 $50.4100
865+ $0.1160 $100.3400
1,330+ $0.1130 $150.2900
1,835+ $0.1090 $200.0150
2,360+ $0.1060 $250.1600
3,160+ $0.0950 $300.2000
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 18,286 pieces
MOQ: 355 pcs
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