TK40E06N1

Part No TK40E06N1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 40A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 300μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1700pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 67W (Tc)
Maximum Rds On at Id,Vgs 10.4 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 043105-TK40E06N1
Popularity Medium
Supply and Demand Status Balance

Description

The Toshiba Semiconductor and Storage 043105-TK40E06N1 is a N-channel MOSFET that is designed for use in discrete semiconductor products. This MOSFET has a maximum power dissipation of 67W (Tc) and a drain-source breakdown voltage of 60V. The continuous drain current at 25°C is 40A (Ta) and the gate-source threshold voltage is 4V @ 300μA. The maximum gate-source voltage is ±20V and the maximum Rds On at Id,Vgs is 10.4 mOhm @ 20A, 10V. This MOSFET is mounted on a through hole and is packaged in a tube/rail. It has a TO-220-3 dimension and is ideal for use in applications that require a drive voltage of 10V. The operating temperature range of this MOSFET is 150°C (TJ).

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
115+ $0.4370 $50.2550
280+ $0.3590 $100.5200
435+ $0.3470 $150.9450
600+ $0.3360 $201.6000
770+ $0.3250 $250.2500
1,035+ $0.2910 $301.1850
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 2,240 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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