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SI2323DDS-T1-GE3

Name: SI2323DDS-T1-GE3
Brand: Vishay
SKU: 321056
Availability: InStock
Rating: 4.77 (80 reviews)

Part No	SI2323DDS-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 20V 5.3A SOT-23
Datasheet	SI2323DDS-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications

SnapMagic 3D Model
Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Gate-Source Threshold Voltage	1V @ 250μA
Max Gate Charge	36nC @ 8V
Max Input Capacitance	1160pF @ 10V
Maximum Gate-Source Voltage	±8V
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Maximum Rds On at Id,Vgs	39 mOhm @ 4.1A, 4.5V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	SOT-23
Dimension	TO-236-3, SC-59, SOT-23-3
Win Source Part Number	093470-SI2323DDS-T1-GE3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Limited
Alternative Parts (Cross-Reference)	DMG3415U-7; Si2331DS-T1-GE3; Si2331DS-E3;

Description

The SI2323DDS-T1-GE3 is a P-Channel MOSFET manufactured by Vishay. It is a surface mount device with SOT-23 package. The MOSFET has a maximum Rds On at Id,Vgs of 39 mOhm @ 4.1A, 4.5V and a maximum gate-source voltage of ±8V. The supply and demand status of the MOSFET is limited. The MOSFET is designed for operating in a temperature range of -55°C to 150°C.

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Pricing & Ordering (USD)

Quantity	Unit Price	Ext. Price
200+	$0.2547	$50.9400
480+	$0.2090	$100.3200
745+	$0.2025	$150.8625
1,025+	$0.1960	$200.9000
1,320+	$0.1894	$250.0080
1,770+	$0.1698	$300.5460

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Availability: 155,965 pieces

MOQ: 200 pcs

Order Increment : 1 pcs

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SI2323DDS-T1-GE3

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