The Vishay MOSFET is a P-Channel MOSFET that is designed for use in industrial power management applications. The MOSFET has a maximum power dissipation of 1.8W (Ta) and a drain-source breakdown voltage of 20V. The continuous drain current at 25°C is 12.5A (Ta) and the gate-source threshold voltage is 900mV @ 1mA. The MOSFET has a maximum gate charge of 150nC @ 5V and a maximum input capacitance of 1100pF @ 30V. The MOSFET is designed to operate in a temperature range of -55°C to 150°C (TJ) and is packaged in a PowerPAK SO-8 package. The MOSFET has a maximum Rds On at Id,Vgs of 7.3 mOhm @ 20A, 4.5V and a medium popularity.