The NCE3035Q is a P-Channel enhancement mode Power MOSFET from Wuxi NCE Power Semiconductor Co., Ltd. This MOSFET is engineered for efficient power switching, boasting a low gate charge and rapid switching speed. These characteristics make it well-suited for various power management systems where performance and size are critical. The device's primary advantage lies in its low on-state resistance (RDS(on)), which minimizes power losses and maximizes overall system efficiency.

Applications

• Load Switch
• DC-DC Conversion
• Power management for portable systems
• Solid state relays

Features

• P-Channel Enhancement Mode
• Low Gate Charge
• Fast Switching Speed
• Low RDS(on)
• RoHS Compliant

Benefits

• Improved energy efficiency with minimal power loss due to the low RDS(on).
• Enables higher-frequency operation with improved transient response thanks to fast switching speed.
• Simplified driving circuitry due to the enhancement mode operation.
• Environmentally compliant because of RoHS certification.

Additional Details

The NCE3035Q is available in a PDFN3.3x3.3 package. This compact package provides good thermal performance. Key specifications include a drain-source voltage (VDS) of -30V, continuous drain current (ID) of -6A, and a typical RDS(on) of 0.045Ω at VGS = -10V. The gate-source voltage (VGS) is rated at +/-20V. The MOSFET is optimized for applications requiring a small footprint and high efficiency. The device's thermal resistance helps to keep the junction temperature within safe operating limits, even under heavy load conditions.